Global GaN Semiconductor Devices Market Report and Forecast 2025-2034

Global GaN Semiconductor Devices Market Outlook

The global GaN semiconductor devices market size attained approximately USD 3.03 billion in 2023. The market is estimated to grow at a CAGR of 26.3% in the forecast period of 2024-2032, reaching a value of around USD 24.68 billion by 2032.

Key Trends in the Market

Gallium nitride semiconductor, a hard hexagonal crystal, is a wide bandgap semiconductor which possesses high thermal conductivity, low on-resistance, and superior mechanical stability. Such properties make it viable for the production of semiconductor devices and light-emitting diodes.

• Increased usage of GaN in consumer electronics over SiC semiconductors due to better thermal conductivity, faster speed, and superior breakdown tolerance is one of the crucial GaN semiconductor devices market trends.

• There is a rise in the implementation of GaN semiconductor devices in 5G networks to facilitate high speed of data transfer and enhance their efficiency. Furthermore, such devices can also be implemented into 5G multi-chip modules to improve their energy optimisation.

• Surge in the production of electric vehicles (EVs) and the introduction of favourable government initiatives aimed at boosting EV adoption provide impetus to the GaN semiconductor devices market demand. With advancements in EV technology and the rising development of EVs with enhanced efficiency, the rising demand for GaN semiconductor devices owing to their high power density and excellent efficiency is likely to aid the market in the coming years.

• GaN semiconductor devices prove as a promising solution in the renewable energy sector due to their ability to perform well at high voltage and temperature conditions in solar energy-based inverters and power converters.

Market Analysis

Based on type, the market is divided into GaN radio frequency devices, opto-semiconductors, and power semiconductors. The GaN semiconductor devices market segmentation, on the basis of devices, include transistor, diode, rectifier, and power IC, among others. Based on wafer size, the market is categorised into 2-inch, 4-inch, and 6-inch and above.

On the basis of end use, the market is classified into automotive, consumer electronics, defence and aerospace, healthcare, industrial and power, and information and communication technology, among others. The major regions in the market are North America, Europe, Asia Pacific, Latin America, and the Middle East and Africa.

The comprehensive EMR report provides an in-depth assessment of the market based on the Porter's five forces model along with giving a SWOT analysis. The report gives a detailed analysis of the following key players in the GaN semiconductor devices market, covering their competitive landscape and latest developments like mergers, acquisitions, investments, and expansion plans.

• Efficient Power Conversion Corporation (EPC) 

• NXP Semiconductors N.V.  

• Wolfspeed, Inc. 

• Texas Instruments Incorporated 

• Fujitsu Limited 

• Infineon Technologies AG  

• MACOM Technology Solutions Inc. 

• Toshiba Corporation  

• Panasonic Holdings Corporation  

• GaN Systems Inc.  

• Others

Market Share by Product

Opto-semiconductors occupy a significant portion of the GaN semiconductor devices market share owing to their application in a wide array of devices such as LED, photodiodes, and solar cells, among others. Furthermore, they are readily implemented into LiDAR (light detection and ranging) due to their properties such as high electron mobility and low parasitic capacitance. Its growing implementation in the automotive parts such as automotive lights and sensor components also provides a positive outlook to the market.

Market Share by Region

As per the GaN semiconductor devices market analysis, North America accounts for a substantial share of the market due to growing funding by government bodies in semiconductor companies. Moreover, increased investment in research and development activities in the defence and aerospace sector has also spurred innovations in GaN radiofrequency components in military electronic warfare.

Technological advancements by market players for enhancing the efficiency and performance of GaN semiconductor devices also provide lucrative growth opportunities to the market.

Competitive Landscape

Efficient Power Conversion Corporation (EPC), established in 2007, is a manufacturer of GaN-based devices. The corporation, with its headquarters in California, the United States, provides products for the automotive, consumer electronics, and industrial sectors, among others.

NXP Semiconductors N.V., founded in 2006, is a semiconductor manufacturer based in Eindhoven, the Netherlands.  The company mainly provides its solutions in the automotive, mobile, industrial, IoT, and communication infrastructure sectors.

Wolfspeed, Inc., a wide-bandgap semiconductor developer, was founded in 1987 and has its headquarters in North Carolina, the United States. The company provides GaN and SiC semiconductors for 5G networks and electric vehicles, among others.

Other GaN semiconductor devices market players include Texas Instruments Incorporated, Fujitsu Limited, Infineon Technologies AG, MACOM Technology Solutions Inc., Toshiba Corporation, Panasonic Holdings Corporation, and GaN Systems Inc., among others.

Key Highlights of the Report