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The global GaN semiconductor devices market size attained approximately USD 3.83 Billion in 2025. The market is estimated to grow at a CAGR of 26.30% in the forecast period of 2026-2035, reaching a value of around USD 39.56 Billion by 2035.
Base Year
Historical Period
Forecast Period
Compound Annual Growth Rate
26.3%
Value in USD Billion
2026-2035
*this image is indicative*
Gallium nitride semiconductor, a hard hexagonal crystal, is a wide bandgap semiconductor which possesses high thermal conductivity, low on-resistance, and superior mechanical stability. Such properties make it viable for the production of semiconductor devices and light-emitting diodes.
The EMR’s report titled “Global GaN Semiconductor Devices Market Report and Forecast 2026-2035” offers a detailed analysis of the market based on the following segments:
Market Breakup by Type
Market Breakup by Devices
Market Breakup by Wafer Size
Market Breakup by End Use
Market Breakup by Region
Opto-semiconductors occupy a significant portion of the GaN semiconductor devices market share owing to their application in a wide array of devices such as LED, photodiodes, and solar cells, among others. Furthermore, they are readily implemented into LiDAR (light detection and ranging) due to their properties such as high electron mobility and low parasitic capacitance. Its growing implementation in the automotive parts such as automotive lights and sensor components also provides a positive outlook to the market.
As per the GaN semiconductor devices market analysis, North America accounts for a substantial share of the market due to growing funding by government bodies in semiconductor companies. Moreover, increased investment in research and development activities in the defence and aerospace sector has also spurred innovations in GaN radiofrequency components in military electronic warfare.
Technological advancements by market players for enhancing the efficiency and performance of GaN semiconductor devices also provide lucrative growth opportunities to the market.
The comprehensive EMR report provides an in-depth assessment of the market based on the Porter's five forces model along with giving a SWOT analysis. The report gives a detailed analysis of the following key players in the GaN semiconductor devices market, covering their competitive landscape and latest developments like mergers, acquisitions, investments, and expansion plans.
Efficient Power Conversion Corporation (EPC), established in 2007, is a manufacturer of GaN-based devices. The corporation, with its headquarters in California, the United States, provides products for the automotive, consumer electronics, and industrial sectors, among others.
NXP Semiconductors N.V., founded in 2006, is a semiconductor manufacturer based in Eindhoven, the Netherlands. The company mainly provides its solutions in the automotive, mobile, industrial, IoT, and communication infrastructure sectors.
Wolfspeed, Inc., a wide-bandgap semiconductor developer, was founded in 1987 and has its headquarters in North Carolina, the United States. The company provides GaN and SiC semiconductors for 5G networks and electric vehicles, among others.
*Please note that this is only a partial list; the complete list of key players is available in the full report. Additionally, the list of key players can be customized to better suit your needs.*
Other GaN semiconductor devices market players include Texas Instruments Incorporated, Fujitsu Limited, Infineon Technologies AG, MACOM Technology Solutions Inc., Toshiba Corporation, Panasonic Holdings Corporation, and GaN Systems Inc., among others.
*While we strive to always give you current and accurate information, the numbers depicted on the website are indicative and may differ from the actual numbers in the main report. At Expert Market Research, we aim to bring you the latest insights and trends in the market. Using our analyses and forecasts, stakeholders can understand the market dynamics, navigate challenges, and capitalize on opportunities to make data-driven strategic decisions.*
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In 2025, the market reached an approximate value of USD 3.83 Billion.
The market is projected to grow at a CAGR of 26.30% between 2026 and 2035.
The market is estimated to witness a healthy growth in the forecast period of 2026-2035, reaching a value of around USD 39.56 Billion by 2035.
The major market drivers are the implementation of GaN semiconductor devices over silicon-based devices due to their high efficiency and speed and low manufacturing cost of Gan semiconductor devices.
The key trends of the market include the growing usage of GaN in consumer electronics and 5G technology and the integration of GaN in chips of electric vehicles.
The major regions in the market are North America, Europe, Asia Pacific, Latin America, and the Middle East and Africa.
The various wafer sizes are 2-inch, 4-inch, and 6-inch and above.
The key players in the market are Efficient Power Conversion Corporation (EPC), NXP Semiconductors N.V., Wolfspeed, Inc., Texas Instruments Incorporated, Fujitsu Limited, Infineon Technologies AG, MACOM Technology Solutions Inc., Toshiba Corporation, Panasonic Holdings Corporation, and GaN Systems Inc., among others.
Explore our key highlights of the report and gain a concise overview of key findings, trends, and actionable insights that will empower your strategic decisions.
| REPORT FEATURES | DETAILS |
| Base Year | 2025 |
| Historical Period | 2019-2025 |
| Forecast Period | 2026-2035 |
| Scope of the Report |
Historical and Forecast Trends, Industry Drivers and Constraints, Historical and Forecast Market Analysis by Segment:
|
| Breakup by Type |
|
| Breakup by Devices |
|
| Breakup by Wafer Size |
|
| Breakup by End Use |
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| Breakup by Region |
|
| Market Dynamics |
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| Competitive Landscape |
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| Companies Covered |
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